The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
May. 14, 2015
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/1052 (2013.01); H01L 27/11524 (2013.01); H01L 29/401 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract
A method of forming a NAND flash memory includes anisotropically etching trenches of a gate stack down to an intermediate level in a floating gate polysilicon layer, leaving remaining portions of the floating gate polysilicon over the gate dielectric layer. Subsequently, forming a protective layer along exposed sides of the trenches. Then, electrically separating individual floating gates by a selective process that is directed to the remaining portions of the floating gate polysilicon layer exposed by trenches.