The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

May. 04, 2015
Applicants:

Jaesung Sim, Hwaseong-si, KR;

Youngwoo Park, Seoul, KR;

Inventors:

Jaesung Sim, Hwaseong-si, KR;

Youngwoo Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/5628 (2013.01); G11C 16/24 (2013.01); G11C 16/0483 (2013.01);
Abstract

According to example embodiments, a nonvolatile memory device includes a plurality of cell strings on a horizontal semiconductor layer. Each of the cell strings including a plurality of memory cells stacked in a direction perpendicular to the horizontal semiconductor layer. According to example embodiments, a programming method of the nonvolatile memory device includes setting up bitlines corresponding the cell strings, setting up a plurality of string select lines connected to the cell strings, and applying a negative voltage lower to a ground select line. The ground select line is connected to a plurality of ground select transistors between the memory cells and the semiconductor layer. The string select lines extend in a direction intersecting the bitlines. The negative voltage is lower than a ground voltage.


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