The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Mar. 15, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroki Tokuhira, Kawasaki, JP;

Hiroyoshi Tanimoto, Yokohama, JP;

Takashi Izumida, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 23/528 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0023 (2013.01); H01L 23/528 (2013.01); H01L 27/249 (2013.01); H01L 27/2436 (2013.01); H01L 45/085 (2013.01); H01L 45/141 (2013.01); G11C 11/5678 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/11 (2013.01); G11C 2213/71 (2013.01);
Abstract

According to an embodiment, a semiconductor memory device comprises: a first wiring line; a memory string connected to this first wiring line; and a plurality of second wiring lines connected to this memory string. In addition, this memory string comprises: a first semiconductor layer connected to the first wiring line; a plurality of second semiconductor layers connected to this first semiconductor layer; and a variable resistance element connected between this second semiconductor layer and the second wiring line. Moreover, of the first semiconductor layer and the plurality of second semiconductor layers, one includes a semiconductor of a first conductivity type, and the other includes a semiconductor of a second conductivity type.


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