The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Nov. 17, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventor:
Ryousuke Takizawa, Naka Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 11/1693 (2013.01); G11C 13/0061 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 17/16 (2013.01); G11C 17/165 (2013.01); G11C 17/18 (2013.01); G11C 29/702 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/79 (2013.01);
Abstract
According to one embodiment, nonvolatile semiconductor memory device comprises: a memory mat including a memory cell having a variable resistance element; a write driver which applies a write current to the memory cell in one of a first direction and a second direction opposite to the first direction in write; and a read driver which applies a verify read current to the memory cell in one of the first direction and the second direction in verify read after write.