The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jan. 18, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Chang-Hyun Kim, Gyeonggi-do, KR;
Min-Chang Kim, Gyeonggi-do, KR;
Do-Yun Lee, Gyeonggi-do, KR;
Jae-Jin Lee, Gyeonggi-do, KR;
Hun-Sam Jung, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 8/08 (2006.01); G11C 8/12 (2006.01); G11C 8/10 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 8/00 (2013.01); G11C 8/10 (2013.01); G11C 8/12 (2013.01); G11C 11/4076 (2013.01);
Abstract
A semiconductor memory device includes a plurality of memory cells coupled to multiple word lines a word line deactivation voltage generation block suitable for generating word line deactivation voltages having different voltage levels corresponding to temperature ranges, and a word line driving block suitable for driving a word line to be deactivated with the word line deactivation voltages selected from the word line deactivation voltages.