The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Oct. 15, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jonghoon Baek, San Jose, CA (US);

Soonam Park, Sunnyvale, CA (US);

Xinglong Chen, San Jose, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); H05H 1/24 (2006.01); C23C 16/52 (2006.01); C23C 16/503 (2006.01); C23C 16/509 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/4401 (2013.01); C23C 16/4404 (2013.01); C23C 16/503 (2013.01); C23C 16/509 (2013.01); H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/32697 (2013.01);
Abstract

Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.


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