The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 01, 2016
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventors:
Tetsuya Inaba, Matsumoto, JP;
Yoshinari Ikeda, Matsumoto, JP;
Katsumi Taniguchi, Matsumoto, JP;
Daisuke Kimijima, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H01L 29/16 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01); H01L 25/07 (2006.01); H01L 29/861 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H01L 23/3675 (2013.01); H01L 23/3736 (2013.01); H01L 23/528 (2013.01); H01L 25/074 (2013.01); H01L 29/1608 (2013.01); H01L 29/861 (2013.01); H01L 2225/06589 (2013.01);
Abstract
In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.