The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Apr. 05, 2012
Kenji Komiya, Osaka, JP;
Shuji Wakaiki, Osaka, JP;
Kohtaroh Kataoka, Osaka, JP;
Masaru Nomura, Osaka, JP;
Yoshiji Ohta, Osaka, JP;
Hiroshi Iwata, Osaka, JP;
Kenji Komiya, Osaka, JP;
Shuji Wakaiki, Osaka, JP;
Kohtaroh Kataoka, Osaka, JP;
Masaru Nomura, Osaka, JP;
Yoshiji Ohta, Osaka, JP;
Hiroshi Iwata, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka-shi, JP;
Abstract
A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved.