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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9590616 B1

PDFFull Text
Date of Patent:
Mar. 07, 2017

Filed:

Jul. 09, 2014

Drive control device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Takeshi Inoue, Kariya, JP;

Takahiro Iwamura, Kariya, JP;

Masahiro Yamamoto, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Lincoln Donovan

Assistant Examiner:

Khareem E Almo

Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/16 (2006.01); H02M 1/38 (2007.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H03K 17/74 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H02M 1/38 (2013.01); H03K 17/74 (2013.01); H02M 2001/0009 (2013.01);
Abstract

A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.

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