The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Nov. 11, 2015
Delphi Technologies, Inc., Troy, MI (US);
Osman Musa, Kokomo, IN (US);
Delphi Technologies Inc., Troy, MI (US);
Abstract
A gate-driver device for operating a field-effect-transistor (FET) includes a pull-down-block and a pull-up-block resistant to or protected from short circuits of the gate drive signal output by the device. The pull-down-block is operable to drive a gate of a FET to a low-voltage. The pull-up-block includes a resistive-pull-up operable to an ON-state and an OFF-state to switchably couple the gate to the high-voltage via an upper-resistive-element, and a current-pull-up arranged in parallel with the resistive-pull-up. The current-pull-up is operable to an ON-state and an OFF-state to control a current-source applied to the gate. When the pull-up-block drives the gate to the high-voltage, the resistive-pull-up and the current-pull-up operates from the OFF-state to the ON-state. A turn-on-interval after the resistive-pull-up operates from the OFF-state to the ON-state the resistive-pull-up operates to the OFF-state while the current-pull-up is maintained in the ON-state. Optionally, the pull-down-block may be similarly configured.