The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Oct. 28, 2015
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventor:

Tsuyoshi Hirao, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01); H01S 5/40 (2006.01); H01S 5/022 (2006.01); H01S 5/028 (2006.01); H01S 5/16 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/168 (2013.01); H01S 5/22 (2013.01); H01S 5/3202 (2013.01); H01S 5/34333 (2013.01); H01S 5/4018 (2013.01); H01S 5/0224 (2013.01); H01S 5/0287 (2013.01); H01S 5/16 (2013.01); H01S 5/2036 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively.


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