The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Apr. 03, 2015
Applicant:
Kyungpook National University Industry-academic Cooperation Foundation, Daegu, KR;
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); C09K 19/12 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0076 (2013.01); C09K 19/12 (2013.01); H01L 51/052 (2013.01); H01L 51/055 (2013.01); H01L 51/0516 (2013.01); C09K 2019/122 (2013.01);
Abstract
The present invention relates to a transistor and a method for manufacturing the same. The transistor according to an embodiment of the present invention includes a substrate, a drain electrode formed on the substrate, a source electrode formed on the substrate and spaced apart from the drain electrode, a channel layer formed on the substrate and including a channel region electrically connecting the drain electrode and the source electrode to each other, a gate electrode formed on the substrate and spaced apart from the channel region, and a liquid crystal layer formed on the substrate to connect the channel layer and the gate electrode to each other.