The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Jun. 19, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Seong Heon Kim, Seongnam-si, KR;

Dongjin Yun, Pohang-si, KR;

Sung Heo, Suwon-si, KR;

Kyu Sik Kim, Yongin-si, KR;

Satoh Ryuichi, Numazu-si, JP;

Gyeongsu Park, Hwaseong-si, KR;

Hyung-Ik Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/18 (2013.01); H01L 51/4253 (2013.01); H01L 51/0046 (2013.01); H01L 51/0077 (2013.01);
Abstract

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoO(2.58≦x1<3.0), ZnO(1.0≦x2<2.0), TiO(1.5≦x3<2.0), VO(1.5≦x4<2.0), TaO(1.0≦x5<2.5), WO(2.0<x6<3.0), and a combination thereof.


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