The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 06, 2012
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Shanghai Lianxing Electronics Co., Ltd, Shanghai, CN;
Jiangsu Cas-igbt Technology Co., Ltd, Jiangsu, CN;
Zhenxing Wu, Beijing, CN;
Yangjun Zhu, Beijing, CN;
Xiaoli Tian, Beijing, CN;
Shuojin Lu, Beijing, CN;
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
SHANGHAI LIANXING ELECTRONICS CO., LTD, Shanghai, CN;
JIANGSU CAS-IGBT TECHNOLOGY CO., LTD, Jiangsu, CN;
Abstract
An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GeSi/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GeSi/Si multi-quantum well strained super lattice layer. The GeSi/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.