The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 14, 2016
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Ichiro Masumoto, Ibaraki, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The characteristics of a semiconductor device using a nitride semiconductor are improved. A trench which penetrates an insulating film and a barrier layer and reaches inside of a channel layer is formed by etching the channel layer, the barrier layer, and the insulating film which are formed over a substrate. Then, an epitaxial regrowth layer is formed over a bottom surface and a side surface of the trench by using an epitaxial growth method. It is possible to reduce roughness (unevenness) of a crystal surface due to etching and the like of the bottom surface and the side surface of the trench by forming the epitaxial regrowth layer in this way. A channel is formed in an interface between the epitaxial regrowth layer and a gate insulating film, so that mobility of carriers improves and on-resistance of an element decreases.