The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 29, 2014
Applicants:
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Inventors:
Chunwei Wu, Beijing, CN;
Woobong Lee, Beijing, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
The present disclosure provides a thin film transistor and its manufacturing method, an array substrate, a display device. The thin film transistor includes a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode are formed above the active layer and located at a first end and a second end of the active layer which are opposite to each other, respectively. The drain electrode completely covers the second end of the active layer.