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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9590047 B1

PDFFull Text
Date of Patent:
Mar. 07, 2017

Filed:

Apr. 04, 2012

Sic bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer

Applicant:

Martin Domeij, Sollentuna, SE;

Inventor:

Martin Domeij, Sollentuna, SE;

Assignee:

FAIRCHILD SEMICONDUCTOR CORPORATION, San Jose, CA (US);

Attorney:

Brake Hughes Bellermann LLP

Primary Examiner:

Allen Parker

Assistant Examiner:

Long Le

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/263 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/263 (2013.01); H01L 29/0607 (2013.01); H01L 29/0821 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66068 (2013.01); H01L 29/66234 (2013.01); H01L 29/732 (2013.01); H01L 29/7322 (2013.01); H01L 29/04 (2013.01); H01L 29/107 (2013.01);
Abstract

A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT () are provided. The SiC BJT comprises an emitter region (), a base region () and a collector region (). The collector region is arranged on a substrate () having an off-axis orientation of about 8 degrees or lower. A defect termination layer (DTL,) for terminating dislocations originating from the substrate is arranged between the substrate and the collector region. The collector region includes a zone () in which the life time of the minority charge carriers is shorter than in the base region. The present invention is advantageous in terms of improved stability of the SiC BJTs.

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