The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Oct. 23, 2015
Dong-kwon Kim, Gimcheon-si, KR;
Kang-ill Seo, Chungcheongbuk-do, KR;
Dong-Kwon Kim, Gimcheon-si, KR;
Kang-Ill Seo, Chungcheongbuk-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device is provided as follows. A fin-type pattern includes first and second oxide regions in an upper portion of the fin-type pattern. The fin-type pattern is extended in a first direction. A first nanowire is extended in the first direction and spaced apart from the fin-type pattern. A gate electrode surrounds a periphery of the first nanowire, extending in a second direction intersecting the first direction. The gate electrode is disposed on a region of the fin-type pattern. The region is positioned between the first and the second oxide regions. A first source/drain is disposed on the first oxide region and connected with an end portion of the first nanowire.