The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Sep. 16, 2014
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Mitsuhiko Kitagawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/41 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 27/0629 (2013.01); H01L 27/0814 (2013.01); H01L 29/063 (2013.01); H01L 29/0634 (2013.01); H01L 29/41 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7805 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/2003 (2013.01);
Abstract
According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.