The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Nov. 10, 2014
Applicant:
Rutgers, the State University of New Jersey, New Brunswick, NJ (US);
Inventors:
Yicheng Lu, East Brunswick, NJ (US);
Yang Zhang, Piscataway, NJ (US);
Chieh-Jen Ku, Edison, NJ (US);
Assignee:
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY, New Brunswick, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/24 (2013.01); H01L 27/2409 (2013.01); H01L 27/2454 (2013.01); H01L 27/2463 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 29/872 (2013.01); H01L 45/00 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); G11C 2213/53 (2013.01);
Abstract
A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.