The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 15, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Longqiang Shi, Guangdong, CN;
Chihyuan Tseng, Guangdong, CN;
Wenhui Li, Guangdong, CN;
Yutong Hu, Guangdong, CN;
Hejing Zhang, Guangdong, CN;
Xiaowen Lv, Guangdong, CN;
Chihyu Su, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
Disclosed are a method for manufacturing a TFT substrate having storage capacitors and the TFT substrate. The method includes: (1) forming a gate terminal and a first metal electrode; (2) forming a gate insulation layer and a gate insulation layer through-hole; (3) forming an oxide semiconductor layer; (4) subjecting a portion of the oxide semiconductor layer to N-type heavy doping to form a first conductor electrode thereby constituting a first storage capacitor; (5) forming an etch stop layer and a first etch stop layer through-hole; (6) forming source/drain terminals and a second metal electrode, thereby constituting a second storage capacitor connected in parallel to the first capacitor; (7) forming a protection layer, a protection layer through-hole, and a second etch stop layer through-hole; and (8) forming a pixel electrode and a second conductor electrode, thereby constituting a third storage capacitor connected in parallel to the second capacitor.