The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Apr. 22, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Chan Sun Hyun, Gyeonggi-do, KR;
Wan Soo Kim, Seoul, KR;
Myung Kyu Ahn, Gyeonggi-do, KR;
Young Bin Ko, Gyeonggi-do, KE;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11556 (2013.01); H01L 27/2472 (2013.01); H01L 29/42332 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 45/04 (2013.01);
Abstract
A semiconductor device includes first semiconductor patterns with protrusions formed on the sidewalls thereof, and second semiconductor patterns respectively coupled to the first semiconductor patterns and increasing in width away from joining surfaces where the first semiconductor patterns and the second semiconductor patterns are coupled.