The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 25, 2015
Applicant:

Stmicroelectronics SA, Montrouge, FR;

Inventors:

Stéphane Denorme, Crolles, FR;

Philippe Candelier, St. Mury Monteymond, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 21/28097 (2013.01); H01L 29/401 (2013.01); H01L 29/4975 (2013.01); H01L 29/66181 (2013.01);
Abstract

An integrated circuit includes a silicon on insulator substrate having a semiconductor film located above a buried insulating layer. At least one memory cell of the one-time-programmable type includes an MOS capacitor having a first electrode region including a gate region at least partially silicided and flanked by an insulating lateral region, a dielectric layer located between the gate region and the semiconductor film, and a second electrode region including a silicided zone of the semiconductor film, located alongside the insulating lateral region and extending at least partially under the dielectric layer.


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