The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jun. 24, 2015
Seokhyun Lim, Seoul, KR;
Hyun-chul Yoon, Seongnam-si, KR;
Younghan Kim, Seoul, KR;
Jin IL OH, Hwaseong-si, KR;
Soonwon Hwang, Seoul, KR;
Seokhyun Lim, Seoul, KR;
Hyun-Chul Yoon, Seongnam-si, KR;
Younghan Kim, Seoul, KR;
Jin Il Oh, Hwaseong-si, KR;
Soonwon Hwang, Seoul, KR;
Abstract
A method of fabricating a semiconductor device with conductive patterns comprises sequentially forming an etch-target layer and a middle mold layer on a substrate, forming a first upper mold pattern and a second upper mold pattern on the middle mold layer to have top surfaces at different levels, etching the middle mold layer using the first and second upper mold patterns as an etch mask to form first and second middle mold patterns, respectively, forming a third middle mold pattern between the first and second middle mold patterns, and etching the etch-target layer using the first to third middle mold patterns as an etch mask to form conductive patterns.