The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Apr. 11, 2016
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventor:
Masaru Senoo, Okazaki, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 29/0684 (2013.01); H01L 29/0696 (2013.01); H01L 29/7397 (2013.01); H01L 29/872 (2013.01);
Abstract
A reverse conducting IGBT is provided with a trench gate member that is provided in an IGBT region and has a lattice-pattern layout, and a trench member that is provided in a diode region and has a stripe-pattern layout. The diode region of the semiconductor substrate includes an anode region of a first conductive type, a drift region of a second conductive type and a barrier region of the second conductive type. The barrier region is electrically connected to a top surface electrode via a pillar member that extends from a top surface of the semiconductor substrate.