The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 17, 2015
Hwi-chan Jun, Yongin-si, KR;
Dae-hee Weon, Seongnam-si, KR;
Heon-jong Shin, Yongin-si, KR;
Yu-sun Lee, Seoul, KR;
Hwi-Chan Jun, Yongin-si, KR;
Dae-Hee Weon, Seongnam-si, KR;
Heon-Jong Shin, Yongin-si, KR;
Yu-Sun Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a semiconductor device, a first gate structure having a first end portion is formed on a substrate. A second gate structure is formed on the substrate, and has a second end portion opposite to the first end portion of the first gate structure in a diagonal direction. A cross-coupling pattern is formed between the first and second gate structure, and electrically connects the first and second gate structures to each other. A first contact plug directly contacts an upper portion of the first end portion of the first gate structure and a first upper sidewall of the cross-coupling pattern. A second contact plug directly contacts an upper portion of the second end portion of the second gate structure and a second upper sidewall of the cross-coupling pattern. In the semiconductor device, a parasitic capacitance due to the cross-coupling structure may decrease.