The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

May. 12, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventor:

Dominik Olligs, Dresden-Langebrueck, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/66 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 23/535 (2006.01); H01J 37/28 (2006.01); G01B 15/00 (2006.01); H01L 23/544 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01B 15/00 (2013.01); H01J 37/28 (2013.01); H01L 23/535 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 23/544 (2013.01); H01L 27/112 (2013.01); H01L 2223/54453 (2013.01);
Abstract

The present disclosure provides in various aspects an alignment monitoring structure and method for monitoring the alignment between a target gate conductor and the corresponding target contact in a semiconductor device, for example, in a CMOS. In accordance with some illustrative embodiments herein, a structure with a plurality of gate conductors disposed over the substrate so as to define a row of parallel gate conductors and a plurality of first contacts is provided, wherein each of the first contacts is disposed between two adjacent gate conductors so as to define a first lateral distance between a first gate conductor and the first contact and a second lateral distance between the first contact and a second gate conductor, and wherein the first lateral distance and the second lateral distance vary systematically along the row of parallel gate conductors.


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