The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9589812 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 07, 2017

Filed:

Oct. 15, 2015
Applicant:

Fuji Xerox Co., Ltd., Tokyo, JP;

Inventors:

Mutsuya Takahashi, Ebina, JP;

Shuichi Yamada, Ebina, JP;

Michiaki Murata, Ebina, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/304 (2006.01); H01L 21/02 (2006.01); B81C 1/00 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B81C 1/00531 (2013.01); B81C 1/00619 (2013.01); H01L 21/02225 (2013.01); H01L 21/3043 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); B81C 2201/0132 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A fabrication method of a semiconductor piece includes forming a groove that has a first groove portion, and a second groove portion which is a groove portion formed to communicate with a lower part of the first groove portion and extends toward a lower part at a steeper angle than an angle of the first groove portion, has a shape without an angle portion between the first groove portion and the second groove portion, is positioned on the front side, and is formed by dry etching; affixing a retention member including an adhesive layer to the surface in which the groove on the front side is formed; thinning the substrate from the back side of the substrate in a state in which the retention member is affixed; and removing the retention member from the surface after the thinning.


Find Patent Forward Citations

Takahashi, Mutsuya. (2017). Fabrication method of semiconductor piece (U.S. Patent No. 9589812). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9589812

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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