The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jun. 19, 2015
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Qiang Xu, Beijing, CN;
Chao Zhao, Kessel-lo, BE;
Jun Luo, Beijing, CN;
Guilei Wang, Beijing, CN;
Tao Yang, Beijing, CN;
Junfeng Li, Beijing, CN;
Abstract
A method of depositing a tungsten (W) layer is disclosed. In one aspect, the method includes depositing a SiHbase W film on a surface of a substrate to preprocess the surface. The method includes depositing a BHbase W layer on the preprocessed surface. The SiHbase W film may be several atom layers thick. The film and base W layer may be deposited in a single ALD process, include reactive gas soak, reactive gas introduction, and main deposition operations. Forming the film may include introducing SiHgas into a reactive cavity during the gas soak operation, and introducing SiHand WFgas into the cavity during the gas introduction operation. The SiHand WFgases may be alternately introduced, for a number of cycles depending on the thickness of the tungsten layer to be deposited.