The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 25, 2013
Applicant:

Soraa, Inc., Fremont, CA (US);

Inventors:

Wenkan Jiang, Santa Barbara, CA (US);

Mark P. D'Evelyn, Santa Barbara, CA (US);

Derrick S. Kamber, Goleta, CA (US);

Dirk Ehrentraut, Santa Barbara, CA (US);

Michael Krames, Mountain View, CA (US);

Assignee:

Soraa, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); C30B 7/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 7/105 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/02458 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 33/0075 (2013.01);
Abstract

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.


Find Patent Forward Citations

Loading…