The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

May. 28, 2015
Applicant:

Powerchip Technology Corporation, Hsinchu, TW;

Inventors:

Akira Ogawa, Tokyo, JP;

Nobuhiko Ito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/30 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 5/14 (2013.01); G11C 7/106 (2013.01); G11C 7/1039 (2013.01); G11C 7/1066 (2013.01);
Abstract

The disclosure provides an internal power supply voltage auxiliary circuit for an internal power supply voltage generating circuit, wherein the internal power supply voltage generating circuit includes: a differential amplifier, comparing an internal power voltage supplied to a loading circuit with a predetermined reference voltage, and outputting a control voltage from an output terminal; and a driving transistor, driving an external power voltage according to the control voltage. The internal power supply voltage auxiliary circuit includes: a time sequence detecting circuit, detecting a transition of a data signal, generating and outputting a detecting signal; and an internal power voltage auxiliary supplying circuit, auxiliary supplying a current for the loading circuit based on the detecting signal. Therefore, it is possible to output an internal power voltage stably, while power consumption would not increase greatly, even when being used in the semiconductor memory device with the DDR.


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