The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 05, 2016
Katsuyuki Fujita, Seoul, KR;
Katsuyuki Fujita, Seoul, KR;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A resistance change memory includes a memory cell array comprising memory cells including magnetic tunnel junction (MTJ) elements; a write and read circuit which performs a write operation and a read operation for the memory cells; a temperature sensor which outputs temperature information corresponding to a temperature of the memory cell array; and a memory controller which controls the write operation and the read operation by the write and read circuit in response to the temperature information, such that a first time period from a write command input to a pre-charge command input is variable according to the temperature information, while a second time period from an active command input to the pre-charge command input is fixed constant regardless of the temperature information.