The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Nov. 29, 2013
Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Takeshi Sakamoto, Tokyo, JP;

Yusuke Kawano, Tokyo, JP;

Mikio Ishikawa, Tokyo, JP;

Yoichi Hitomi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 33/38 (2006.01); G03F 7/00 (2006.01); C23C 16/455 (2006.01); B81C 1/00 (2006.01); B82Y 40/00 (2011.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
B29C 33/3842 (2013.01); B29C 33/38 (2013.01); G03F 7/0002 (2013.01); B29K 2995/0026 (2013.01); B81C 1/0092 (2013.01); B81C 1/00396 (2013.01); B81C 1/00404 (2013.01); B82Y 40/00 (2013.01); C09K 13/00 (2013.01); C23C 16/45525 (2013.01);
Abstract

In the method, a sidewall pattern is formed in a side wall of a first resist pattern that is formed on a second hard mask layer of a base material in which first and second hard mask layers are laminated in the order of description, a second hard mask pattern is formed by etching the second hard mask layer by using the sidewall pattern as a mask, a first hard mask pattern is formed by etching the first hard mask layer by using, as a mask, the second hard mask pattern and a second resist pattern that is formed on the first hard mask layer of the base material, and the first and second fine patterns are formed by etching the base material by using the first hard mask pattern as a mask.


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