The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Jul. 08, 2014
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Sebastien Mermoz, Meylan, FR;

Lea Di Cioccio, Saint Ismier, FR;

Thomas Magis, Grenoble, FR;

Loic Sanchez, Voiron, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); B01L 3/00 (2006.01); B81C 1/00 (2006.01); B81C 3/00 (2006.01); B81B 1/00 (2006.01); H01L 23/13 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
B01L 3/561 (2013.01); B01L 3/502 (2013.01); B81B 1/002 (2013.01); B81C 1/00555 (2013.01); B81C 1/00626 (2013.01); B81C 3/005 (2013.01); B01L 2200/12 (2013.01); B01L 2300/0838 (2013.01); B81B 2201/058 (2013.01); B81C 2201/0112 (2013.01); H01L 21/30655 (2013.01); H01L 23/13 (2013.01); H01L 2224/95146 (2013.01);
Abstract

A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.


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