The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jun. 23, 2015
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Victor Lenchenkov, Sunnyvale, CA (US);

Hamid Soleimani, Cupertino, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/359 (2011.01); H04N 5/225 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/359 (2013.01); H01L 27/1463 (2013.01); H01L 27/14623 (2013.01); H04N 5/2254 (2013.01);
Abstract

An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a semiconductor substrate. Buried light shields may be formed on the substrate to prevent regions between two adjacent photodiodes from being exposed to incoming light. In one embodiment, a shallow trench isolation (STI) structure may be formed between the photodiode and the storage diode, and a conductive layer formed from optically absorptive material may be constructed at the bottom of the STI structure. A via may be formed through the STI structure to help bias the conductive layer using a ground or negative voltage. In another embodiment, an isolation ring structure may be formed at the base of the buried light shields. The isolation ring structure may be formed from optically absorptive material and can optionally be biased using a ground or negative voltage.


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