The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jun. 15, 2015
Applicant:
Smarter Microelectronics (Guang Zhou) Co., Ltd., Guangzhou, CN;
Inventor:
Yang Li, Guangzhou, CN;
Assignee:
SMARTED MICROELECTRONICS (GUANG ZHOU) CO., LTD., Guangzhou, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 3/3565 (2006.01);
U.S. Cl.
CPC ...
H03K 3/3565 (2013.01);
Abstract
A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process includes: a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit; wherein, the PMOS/NMOS body control circuit is configured to, through changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enable different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels.