The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jan. 29, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Yongsung Kim, Suwon-si, KR;
Chiyui Ahn, Palo Alto, CA (US);
Aditya Sood, Palo Alto, CA (US);
Eric Pop, Palo Alto, CA (US);
H.-S. Philip Wong, Palo Alto, CA (US);
Kenneth E. Goodson, Palo Alto, CA (US);
Scott Fong, Palo Alto, CA (US);
Seunghyun Lee, Palo Alto, CA (US);
Christopher M. Neumann, Palo Alto, CA (US);
Mehdi Asheghi, Palo Alto, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.