The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Apr. 20, 2015
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Liang-Sheng Chi, Hsinchu, TW;

Pei-Chia Chen, Hsinchu, TW;

Chih-Hao Chen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/005 (2013.01); H01L 33/0095 (2013.01); H01L 33/46 (2013.01); H01L 27/153 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01);
Abstract

A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.


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