The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Feb. 27, 2013
Applicants:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Abengoa Solar New Technologies, S.a., Sevilla, ES;

Inventors:

David S. Albin, Golden, CO (US);

Nirav Vora, Toledo, OH (US);

Sebastian Caparros Jimenez, Sevilla, ES;

Joaquin Murillo Gutierrez, Sevilla, ES;

Emilio Sanchez Cortezon, Sevilla, ES;

Manuel Romero, Littleton, CO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/44 (2006.01); C23C 16/30 (2006.01); C23C 14/22 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C23C 14/0623 (2013.01); C23C 14/22 (2013.01); C23C 16/305 (2013.01); C23C 16/44 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/02631 (2013.01); H01L 31/0322 (2013.01); Y02E 10/541 (2013.01);
Abstract

Systems and methods for forming solar cells with CuInSeand Cu(In,Ga)Sefilms are provided. In one embodiment, a method comprises: during a first stage (), performing a mass transport through vapor transport of an indium chloride (InCl) vapor () and Se vapor () to deposit a semiconductor film () upon a substrate (); heating the substrate () and the semiconductor film to a desired temperature (); during a second stage () following the first stage (), performing a mass transport through vapor transport of a copper chloride (CuCl) vapor () and Se vapor () to the semiconductor film (); and during a third stage () following the second stage (), performing a mass transport through vapor transport of an indium chloride (InCl) vapor () and Se vapor () to the semiconductor film ().


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