The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 03, 2016
Sifotonics Technologies Co., Ltd., Woburn, MA (US);
Tuo Shi, Beijing, CN;
Pengfei Cai, Beijing, CN;
Liangbo Wang, Beijing, CN;
Nai Zhang, Fremont, CA (US);
Wang Chen, Beijing, CN;
Su Li, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Mengyuan Huang, Beijing, CN;
Dong Pan, Andover, MA (US);
SIFOTONICS TECHNOLOGIES CO., LTD., Woburn, MA (US);
Abstract
Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.