The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Dec. 18, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
The University of Tokyo, Bunkyo-ku, Tokyo, JP;
Tomohiro Nozawa, Osaka, JP;
Yasuhiko Arakawa, Bunkyo-ku, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Abstract
A photoelectric conversion element according to the present invention includes a photoelectric conversion layer. The photoelectric conversion layer includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer which is interposed between the p-type semiconductor layer and the n-type semiconductor layer. The superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum layers are stacked alternately and repeatedly, and is provided so as to form an intermediate energy band between an upper end of a valence band of the barrier layer and a lower end of a conduction band of the barrier layer. The intermediate energy band is formed from a region of the superlattice semiconductor layer, which is near to the p-type semiconductor layer, to a region of the superlattice semiconductor layer, which is near to the n-type semiconductor layer, and the intermediate energy band has a region having a wide band width and a region having a narrow band width.