The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Dec. 21, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Sundararajan Balasekaran, Yokohama, JP;

Yasuhiro Iguchi, Yokohama, JP;

Hiroshi Inada, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03042 (2013.01); H01L 27/1464 (2013.01); H01L 27/1465 (2013.01); H01L 27/14636 (2013.01); H01L 27/14694 (2013.01); H01L 31/035236 (2013.01);
Abstract

A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type dopant and an n-type dopant; a stacked semiconductor layer disposed on the principal surface of the substrate, the stacked semiconductor layer including an optical absorption layer; and an incident surface provided on the back surface of the substrate that receives an incident light. The optical absorption layer includes a super-lattice structure including a first semiconductor layer and a second semiconductor layer that are alternately stacked. In addition, the first semiconductor layer contains gallium and antimony as constituent elements. The second semiconductor layer is composed of a material different from a material of the first semiconductor layer.


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