The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Sep. 02, 2011
Applicants:
Agata Lachowicz, Karlstein, DE;
Berthold Schum, Biebergemünd, DE;
Knut Vaas, Alzenau, DE;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); C09K 13/08 (2006.01); H01L 21/306 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); C09K 13/08 (2013.01); H01L 21/30604 (2013.01); H01L 31/022425 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.