The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jan. 10, 2014
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Tomoyuki Komori, Osaka, JP;

Hidekazu Arase, Hyogo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/02366 (2013.01); H01L 31/022425 (2013.01); H01L 31/022483 (2013.01); H01L 31/0392 (2013.01); H01L 31/03921 (2013.01); Y02E 10/50 (2013.01);
Abstract

A solar cell element includes: a transparent body; a MgAglayer (0.001≦x≦0.045) having a thickness (2-13 nm); a ZnO layer having an arithmetical mean (Ra: 20-870 nm); and a transparent conductive layer. A photoelectric conversion layer including n-type and p-type layers further includes n-side and p-side electrodes. The ZnO layer is composed of ZnO columnar crystal grains grown on the MgAglayer, and each ZnO grain has a longitudinal direction along a normal line of the body, has a width increasing from the MgAglayer toward the transparent conductive layer, has a width which appears by cutting each ZnO grain along the normal line, and has a R2/R1 ratio (1.1-1.8). R1 represents the width of one end of the ZnO grain, and the one end is in contact with the surface of the MgAglayer, and R2 represents the width of the other end of the ZnO grain.


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