The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 27, 2014
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Inventors:
Byung Du Ahn, Hwaseong-si, KR;
Gun Hee Kim, Hwaseong-si, KR;
Yeon-Hong Kim, Hwaseong-si, KR;
Jin Hyun Park, Yongin-si, KR;
Shuji Kosaka, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01);
Abstract
In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10cmor less, and a mobility satisfies 15 cm2/Vs or more.