The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Apr. 20, 2015
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Fang Li, Shanghai, CN;

Yefang Zhu, Shanghai, CN;

Kun Chen, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/737 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02532 (2013.01); H01L 21/3083 (2013.01); H01L 21/30608 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/7378 (2013.01);
Abstract

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with SiGe material. The shape cavity comprises convex regions interfacing the substrate. There are other embodiments as well.


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