The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
May. 27, 2015
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Huilong Zhu, Poughkeepsie, NY (US);
Qingqing Liang, Lagrangeville, NY (US);
Abstract
A FinFET and a method of manufacturing the same are disclosed. The method includes forming a semiconductor fin. The method further includes forming a first region, the first region being one of a source region and a drain region. The method further includes forming a sacrificial spacer. The method further includes forming a second region with the sacrificial spacer as a mask, the second region being the other one of the source region and the drain region. The method further includes removing the sacrificial spacer. The method further includes replacing the sacrificial spacer with a gate stack comprising a gate conductor and a gate dielectric that separates the gate conductor from the semiconductor fin.