The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Sep. 05, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Yuui Shimizu, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H01L 29/423 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); H03K 19/018571 (2013.01);
Abstract
According to one embodiment, a semiconductor integrated device includes a first node that receives a first voltage, a second node that receives a second voltage, and an electrode. A PMOS transistor is coupled between the first node and the electrode. An NMOS transistor is coupled between the second node and the electrode. A control signal at a voltage lower than the second voltage is supplied to a gate electrode of the PMOS transistor. A control signal at a voltage higher than the first voltage is supplied to a gate electrode of the NMOS transistor.