The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Aug. 31, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Chisato Furukawa, Komatsu Ishikawa, JP;
Masaaki Ogawa, Sagamihara Kanagawa, JP;
Takako Motai, Yokohama Kanagawa, JP;
Wakana Nishiwaki, Kawasaki Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/32 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 29/0653 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01);
Abstract
A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.