The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Mar. 04, 2015
Applicant:

Ubiq Semiconductor Corp., Zhubei, Hsinchu County, TW;

Inventors:

Kao-Way Tu, Zhubei, TW;

Yi-Yun Tsai, Zhubei, TW;

Yuan-Shun Chang, Zhubei, TW;

Assignee:

UBIQ SEMICONDUCTOR CORP., Zhubei, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 27/088 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/4238 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

A power semiconductor device of stripe cell geometry including a substrate, a plurality of striped power semiconductor units, and a guard ring structure is provided. The substrate has an active area and a termination area surrounding the active area defined thereon. The striped semiconductor unit includes a striped gate conductive structure. The striped semiconductor units are located in the active area. The guard ring structure is located in the termination area and includes at least a ring-shaped conductive structure surrounding the striped power semiconductor units. The ring-shaped conductive structure and the striped gate conductive structures are formed on the same conductive layer, and at least one of the striped gate conductive structures is separated from the nearby ring-shaped conductive structure and electrically connected to the nearby ring-shaped conductive structure through the gate metal pad.


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